▎ 摘　　要

Properly cutting graphene into certain high-quality micro-/nanoscale structures in a cost-effective way has a critical role. Here, we report a novel approach to pattern graphene films by H2O-based magnetic-assisted ultraviolet (UV) photolysis under irradiation at 184.9 nm. By virtue of the paramagnetic characteristic, the photo-udissociated hydroxyl [OH(X-2 Pi)] radicals are magnetized and have their oxidation capability highly enhanced through converting into an accelerated directional motion. Meanwhile, the precursor of H2O((X) over tilde (1)A(1)) molecules distributes uniformly thanks to its weak diamagnetic characteristic, and there exists no instable diamagnetic intermediate to cause lateral oxidation. Possessing these unique traits, the H2O-based magnetic-assisted UV photolysis has the capability of making graphene microscale patterns with the linewidth down to 8.5 mu m under a copper grid shadow mask. Furthermore, it is feasible to pattern graphene films into 40 nm-wide ribbons under ZnO nanowires and realize hybrid graphene/ZnO nanoribbon field-effect transistors with a hole mobility up to 7200 cm(2).V-1.s(-1). The X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses reveal that OH(X-2 Pi) radicals act as a strong oxidant and that another product of H(1(2)S) adsorbs weakly on graphene.