• 文献标题:   Enhancing the Charge Carrier Separation and Transport via Nitrogen-Doped Graphene Quantum Dot-TiO2 Nanoplate Hybrid Structure for an Efficient NO Gas Sensor
  • 文献类型:   Article
  • 作  者:   MURALI G, REDDEPPA M, REDDY CS, PARK S, CHANDRAKALAVATHI T, KIM MD, IN I
  • 作者关键词:   tio2@ngqd, pn junction, no gas sensor, temperature, uv illumination
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Chungnam Natl Univ
  • 被引频次:   2
  • DOI:   10.1021/acsami.9b19896
  • 出版年:   2020

▎ 摘  要

Herein, we demonstrate the ultraviolet (UV) light activated high-performance room-temperature NO gas sensor based on nitrogen-doped graphene quantum dots (NGQDs)decorated TiO2 hybrid structure. TiO2 employed in the form of {001} facets exposed rectangular nanoplate morphology, which is highly reactive for the adsorption of active oxygen species. NGQD layers are grown on TiO2 nanoplates by graphitization of precursors via hydrothermal treatment. The decoration of NGQDs on the TiO2 surface dramatically enhanced the efficiency of gas and carriers exchange, charge carrier separation and transportation, and oxygen vacancies, which eventually improved the sensing performance. At room temperature, the TiO2@ NGQDs hybrid structure exhibited a response of 12.0% to 100 ppm NO, which is 4.8 times higher compared to that of pristine TiO2 nanoplates. The response of TiO2@NGQDs hybrid structure is further upgraded by employing the ultraviolet light illumination and manipulating the operating temperature. Under the UV (lambda = 365 nm) illumination at room temperature, the hybrid structure response escalated to similar to 31.1% for 100 ppm NO. On the other hand, the tailoring of working temperature yielded a response of similar to 223% at an optimum operating temperature of 250 degrees C. The NO gas-sensing mechanism of TiO2@NGQDs nanoplate's hybrid structure sensors under UV illumination and different working temperatures is discussed.