• 文献标题:   Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs
  • 文献类型:   Article
  • 作  者:   MEENA S, CHOUDHARY S
  • 作者关键词:  
  • 出版物名称:   PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • ISSN:   1463-9076 EI 1463-9084
  • 通讯作者地址:   Natl Inst Technol
  • 被引频次:   8
  • DOI:   10.1039/c7cp03342g
  • 出版年:   2017

▎ 摘  要

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes. Upon comparison of the results with the results of in-plane graphene based MTJs reported in the past, it is observed that out-of-plane structures offer a high TMR of B100% and the transport phenomenon is tunneling since there are no transmission states near the Fermi level. However, in in-plane structures, the transport phenomenon cannot be tunneling since there are a significant number of transmission states near the Fermi level, although a high Magneto Resistance (MR) of B90% is observed. Both the TMR and Spin Injection Efficiency Z (Spin-Filtration) are higher in out-of-plane structures in comparison to in-plane structures, which is due to the graphene sheet acting as a perfect barrier in out-of-plane structures, which results in negligible spin down current (Ik) in both the Parallel Configuration (PC) and Antiparallel Configuration (APC).