• 文献标题:   Crossed Andreev reflection versus electron transfer in three-terminal graphene devices
  • 文献类型:   Article
  • 作  者:   HAUGEN H, HUERTASHERNANDO D, BRATAAS A, WAINTAL X
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Norwegian Univ Sci Technol
  • 被引频次:   10
  • DOI:   10.1103/PhysRevB.81.174523
  • 出版年:   2010

▎ 摘  要

We investigate the transport properties of three-terminal graphene devices, where one terminal is superconducting and two are normal metals. The terminals are connected by nanoribbons. Electron transfer (ET) and crossed Andreev reflection (CAR) are identified via the nonlocal signal between the two normal terminals. Analytical expressions for ET and CAR in symmetric devices are found. We compute ET and CAR numerically for asymmetric devices. ET dominates CAR in symmetric devices, but CAR can dominate ET in asymmetric devices, where only the zero-energy modes of the zigzag nanoribbons contribute to the transport.