▎ 摘　　要

The initial growth of bismuth (Bi) on epitaxial graphene (EG) on SiC(0001) at low deposition rates has been investigated using low temperature scanning tunneling microscopy (LT-STM) and synchrotron-based photoemission spectroscopy (PES). PES measurements reveal an islanding growth mode of Bi on EG due to weak interfacial interactions. LT-STM measurements show that Bi forms one-dimensional (1D) 4-monolayer-thick nanoribbons on EG with the orientation relationship of Bi(011(_)2) 3/4 EG(0001) and Bi(112(_)0) aligned well with EG(112(_)0). Scanning tunneling spectroscopy (STS) results reveal the semiconducting nature of such Bi nanoribbons.