• 文献标题:   Strain-tunable band gap in graphene/h-BN hetero-bilayer
  • 文献类型:   Article
  • 作  者:   BEHERA H, MUKHOPADHYAY G
  • 作者关键词:   nanostructure, ab initio calculation, electronic structure, transport propertie
  • 出版物名称:   JOURNAL OF PHYSICS CHEMISTRY OF SOLIDS
  • ISSN:   0022-3697 EI 1879-2553
  • 通讯作者地址:   Indian Inst Technol
  • 被引频次:   28
  • DOI:   10.1016/j.jpcs.2012.02.010
  • 出版年:   2012

▎ 摘  要

Using full-potential density functional calculations within local density approximation (LDA), we predict that mechanically tunable band-gap and quasi-particle-effective-mass are realizable in graphene/hexagonal-BN hetero-bilayer (C/h-BN HBL) by application of in-plane homogeneous biaxial strain. While providing one of the possible reasons for the experimentally observed gap-less pristine-graphene-like electronic properties of C/h-BN HBL, which theoretically has a narrow band-gap, we suggest a schematic experiment for verification of our results which may find applications in nano-electromechanical systems (NEMS), nano opto-mechanical systems (NOMS) and other nano-devices based on C/h-BN HBL. (C) 2012 Elsevier Ltd. All rights reserved.