▎ 摘　　要

Bialkali photocathodes, such as cesium potassium antimonide (CsK2Sb), can generate a high-brightness electron beam using a high-power green laser. These photocathode materials have potential applications in advanced accelerators and electron microscopes. It is known that the quantum efficiency (QE) of these photocathodes is affected severely by their substrates; however, reusability of the substrates is not well known. Here, we use graphene, silicon (Si), and molybdenum (Mo) substrates to evaluate the effects of substrates on the QE of redeposited CsK2Sb photocathodes after thermal cleanings. We found that the QE of CsK2Sb photocathodes redeposited on a graphene substrate after thermal cleaning at 500 degrees C remained largely unchanged. On the other hand, the QE of redeposited photocathodes on Si and Mo substrates after thermal cleaning at the same temperature decreased drastically. We used x-ray photoelectron spectroscopy to quantitatively evaluate the residues of photocathodes after thermal cleaning at 400 degrees C and 500 degrees C. We found that Sb, K, and Cs are removed by thermal cleaning at 500 degrees C for the graphene substrate, but all or the majority of these elements remained on the Si and Mo substrates. The results were consistent with our density functional theory calculations for the case of Si, which we investigated. Furthermore, our angle-resolved photoemission spectroscopy on graphene indicated that its intrinsic electronic structure is preserved after photocathode deposition and thermal cleaning at 500 degrees C. Hence, we attributed the difference in the amount of photocathode residue to the unique dangling-bond-free surface of inert graphene. Our results provide a foundation for graphene-based reusable substrates for high-QE semiconductor photocathodes.