▎ 摘　　要

In this work, we fabricated graphene-CsPbBr3 perovskite hybrid phototransistors by plasma enhanced chemical vapor deposition which has realized the effective detection of solar-blind ultraviolet light. The hybrid phototransistors result in a responsivity of 22.8 A.W-1 and detectivity of 1.89 x 10(10) Jones at incident power of 1.2 mu W under 266 nm illumination. This performance is attributed to the combination of the strong light absorption property of perovskite material and the high mobility of graphene, which make the device has high exciton separation ability under light exposure, and can effectively generate photocurrent. In addition, the device also shows a wide range of light detection spectral range from solar-blind ultraviolet to visible (266-550 nm).