• 文献标题:   Theoretical performance estimation of silicene, germanene, and graphene nanoribbon field-effect transistors under ballistic transport
  • 文献类型:   Article
  • 作  者:   KANEKO S, TSUCHIYA H, KAMAKURA Y, MORI N, OGAWA M
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS EXPRESS
  • ISSN:   1882-0778 EI 1882-0786
  • 通讯作者地址:   Kobe Univ
  • 被引频次:   31
  • DOI:   10.7567/APEX.7.035102
  • 出版年:   2014

▎ 摘  要

Silicene or germanene is a monolayer honeycomb lattice made of Si or Ge, similar to graphene made of C. In this work, we have assessed the performance potentials of silicene nanoribbon (SiNR), germanene nanoribbon (GeNR), and graphene nanoribbon (GNR), which all have a sufficient band gap to switch off, as field-effect transistor (FET) channel materials. We have demonstrated that, by comparing at the same band gap of similar to 0.5 eV, the GNR FET maintains an advantage over SiNR or GeNR FETs under an ideal transport situation, but SiNR and GeNR are attractive channel materials for high-performance FETs as well. (C) 2014 The Japan Society of Applied Physics