▎ 摘　　要

We fabricated GaN light-emitting diodes with a layer of graphene as a transparent electrode. A 3-nm-thick Al layer was deposited on the graphene layer by electron-beam evaporation. This Al layer plays an important role in protecting the graphene layer during the device fabrication process. Moreover, this Al layer can also enhance the light emission of GaN light-emitting diodes through the investigation of electroluminescence spectra. The significantly improved light emission is attributed to the current expansion, the enhanced plasmonic density of states, and the decreased non-radiative recombination rate. (C) 2014 The Japan Society of Applied Physics