• 文献标题:   Bubble-Free Transfer Technique for High-Quality Graphene/Hexagonal Boron Nitride van der Waals Heterostructures
  • 文献类型:   Article
  • 作  者:   IWASAKI T, ENDO K, WATANABE E, TSUYA D, MORITA Y, NAKAHARAI S, NOGUCHI Y, WAKAYAMA Y, WATANABE K, TANIGUCHI T, MORIYAMA S
  • 作者关键词:   graphene/hexagonal boron nitride heterostructure, alldry transfer, bubblefree transfer technique, quantum hall effect, 2d material, van der waals heterostructure
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   NIMS
  • 被引频次:   7
  • DOI:   10.1021/acsami.9b19191
  • 出版年:   2020

▎ 摘  要

y Bubbles at the interface of two-dimensional layered materials in van der Waals heterostructures cause deterioration in the quality of materials, thereby limiting the size and design of devices. In this paper, we report a simple all-dry transfer technique, with which the bubble formation can be avoided. As a key factor in the technique, a contact angle between a picked-up flake on a viscoelastic polymer stamp and another flake on a substrate was introduced by protrusion at the stamp surface. Using this technique, we demonstrated the fabrication of high-quality devices on the basis of graphene/hexagonal boron nitride heterostructures with a large bubble-free region. Additionally, the technique can be used to remove unnecessary flakes on a substrate under an optical microscopic scale. Most importantly, it improves the yield and throughput for the fabrication process of high-quality van der Waals heterostructure-based devices.