• 文献标题:   Vacancy-induced shifts of edge states in Z-shaped graphene nanoribbon quantum dot
  • 文献类型:   Article
  • 作  者:   KIHIRA K, AOKI M
  • 作者关键词:   nanostructure, semiconductor, thin film, defect, electronic structure
  • 出版物名称:   MATERIALS RESEARCH BULLETIN
  • ISSN:   0025-5408 EI 1873-4227
  • 通讯作者地址:   Gifu Univ
  • 被引频次:   1
  • DOI:   10.1016/j.materresbull.2017.06.006
  • 出版年:   2017

▎ 摘  要

Quasi-one-dimensional quantum dot consisting of Z-shaped graphene nanoribbon junction, is known to create discrete edge states in the bandgap due to quantum confinement effect depending on the length of the quantum dot. To examine possible changes in the midgap states caused by introducing a carbon vacancy within the quantum dot, we calculated the band structures of the defective systems using density functional based tight-binding method, and also using a simplest tight-binding model for pi-electrons. As the central result, we predict that the separation of midgap edge states are considerably variable, depending on the choice of a vacancy site. The transmission via inidgap edge states and zero mode state is shown. (C) 2017 Elsevier Ltd. All rights reserved.