• 文献标题:   Photoinduced C-C Reactions on Insulators toward Photolithography of Graphene Nanoarchitectures
  • 文献类型:   Article
  • 作  者:   PALMA CA, DILLER K, BERGER R, WELLE A, BJORK J, CABELLOS JL, MOWBRAY DJ, PAPAGEORGIOU AC, IVLEVA NP, MATICH S, MARGAPOTI E, NIESSNER R, MENGES B, REICHERT J, FENG XL, RADER HJ, KLAPPENBERGER F, RUBIO A, MULLEN K, BARTH JV
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • ISSN:   0002-7863
  • 通讯作者地址:   Tech Univ Munich
  • 被引频次:   19
  • DOI:   10.1021/ja412868w
  • 出版年:   2014

▎ 摘  要

On-surface chemistry for atomically precise sp(2) macromolecules requires top-down lithographic methods on insulating surfaces in order to pattern the long-range complex architectures needed by the semiconductor industry. Here, we fabricate sp(2)-carbon nanometer-thin films on insulators and under ultrahigh vacuum (UHV) conditions from photocoupled brominated precursors. We reveal that covalent coupling is initiated by C-Br bond cleavage through photon energies exceeding 4.4 eV, as monitored by laser desorption ionization (LDI) mass spectrometry (MS) and X-ray photoelectron spectroscopy (XPS). Density functional theory (DFT) gives insight into the mechanisms of C-Br scission and C C coupling processes. Further, unreacted material can be sublimed and the coupled sp(2)-carbon precursors can be graphitized by e-beam treatment at 500 degrees C, demonstrating promising applications in photolithography of graphene nanoarchitectures. Our results present UV-induced reactions on insulators for the formation of all sp(2)-carbon architectures, thereby converging top-down lithography and bottom-up on-surface chemistry into technology.