▎ 摘　　要

Graphene/1T-TaS2 hybrid structures were measured using the Raman spectroscopy at room temperature. Spatially resolved Raman maps show that the region for which an effective graphene G band shift was observed correlates well with the tantalum disulfide flake, suggesting a change of the carrier concentration in graphene induced by 1T-TaS2. This effect was observed only for the sample exfoliated in vacuum, which signifies the necessity of preventing tantalum disulfide from oxidation during sample preparation.