▎ 摘　　要

Temperature dependent electrical conduction in as prepared and annealed graphene oxide (GO) thin films was investigated. The electrical measurements on a sandwich structure of GO reveal space charge limited conduction in the presence of an exponential trap distribution within the temperature range of 83-288 K. However, for the annealed GO, at all temperatures and low bias voltage, charge transport is governed by a bulk limited process with a bias dependent crossover from Ohmic to trap free space charge limited conduction. At the high bias voltage and low temperature, the conduction becomes space charge limited with exponential distribution of traps. Moreover, we estimated trap densities in both pristine and annealed GO.