• 文献标题:   Large scale bi-layer graphene by suppression of nucleation from a solid precursor
  • 文献类型:   Article
  • 作  者:   AHMED M, KISHI N, SOGA T
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:  
  • 通讯作者地址:   Nagoya Inst Technol
  • 被引频次:   4
  • DOI:   10.1039/c5ra02038g
  • 出版年:   2015

▎ 摘  要

We report the synthesis of large-scale Bilayer Graphene (BLG) from the solid precursor, camphor using a Chemical Vapor Deposition (CVD) method at atmospheric pressure. Controlled insertion of the carbon source was obtained by a two-fold gas flow approach and found to have a profound impact to obtain continuous BLG. Suppression of nucleation by annealing the substrate for an extended period helped to obtain large scale BLG on Cooper foil. The impact of deposition temperature, deposition time, and flow of the carrier gas were examined for further optimization. The as grown BLG was transferred to an insulator substrate and the measured transmittance was found to be above 90%. This mechanism to obtain low cost BLG on a large scale may have profound implications in semiconductor industries.