• 文献标题:   High-frequency noise characterization of graphene field effect transistors on SiC substrates
  • 文献类型:   Article
  • 作  者:   YU C, HE ZZ, SONG XB, LIU QB, DUN SB, HAN TT, WANG JJ, ZHOU CJ, GUO JC, LV YJ, CAI SJ, FENG ZH
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Hebei Semicond Res Inst
  • 被引频次:   1
  • DOI:   10.1063/1.4994324
  • 出版年:   2017

▎ 摘  要

Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics. Published by AIP Publishing.