▎ 摘　　要

The authors have demonstrated the fabrication of monolayer graphene-based organic field-effect transistors (GOFETs) by using a thermally-treated exfoliation technique that produced a large, high-quality graphene sample with a production rate higher than that, of the graphene produced by using the original exfoliation. The presence of a monolayer of graphene on the polymethylmethacrylate (PMMA) layer could be identified by a comparison of the Raman spectra of PMMA and of graphene measured at the 514-nm argon-ion laser excitation. We also report the output characteristics of GOFETs in which linear behaviors and changes of I - V characteristics with different gate voltages were observed. These results indicate that the GOFET we studied has a good Ohmic contact and transport properties. Thus, our approach illuminates a possibility that a monolayer of graphene might lead to the development of next-generation OFET applications with better performances.