• 文献标题:   Current transport across the pentacene/CVD-grown graphene interface for diode applications
  • 文献类型:   Article
  • 作  者:   BERKE K, TONGAY S, MCCARTHY MA, RINZLER AG, APPLETON BR, HEBARD AF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Univ Florida
  • 被引频次:   30
  • DOI:   10.1088/0953-8984/24/25/255802
  • 出版年:   2012

▎ 摘  要

We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole-Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole-Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole-Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.