• 文献标题:   High-Surface-Area Nitrogen-Doped Reduced Graphene Oxide for Electric Double-Layer Capacitors
  • 文献类型:   Article
  • 作  者:   YOUN HC, BAK SM, KIM MS, JAYE C, FISCHER DA, LEE CW, YANG XQ, ROH KC, KIM KB
  • 作者关键词:   doping, electrochemistry, graphene, nitrogen, synthesis design
  • 出版物名称:   CHEMSUSCHEM
  • ISSN:   1864-5631 EI 1864-564X
  • 通讯作者地址:   Yonsei Univ
  • 被引频次:   37
  • DOI:   10.1002/cssc.201500122
  • 出版年:   2015

▎ 摘  要

A two-step method consisting of solid-state microwave irradiation and heat treatment under NH3 gas was used to prepare nitrogen-doped reduced graphene oxide (N-RGO) with a high specific surface area (1007m(2)g(-1)), high electrical conductivity (1532Sm(-1)), and low oxygen content (1.5wt%) for electrical double-layer capacitor applications. The specific capacitance of N-RGO was 291Fg(-1) at a current density of 1Ag(-1), and a capacitance of 261Fg(-1) was retained at 50Ag(-1), which indicated a very good rate capability. N-RGO also showed excellent cycling stability and preserved 96% of the initial specific capacitance after 100000cycles. Near-edge X-ray absorption fine-structure spectroscopy results provided evidenced for the recovery of conjugation in the carbon networks with the removal of oxygenated groups and revealed chemical bonding of the nitrogen atoms in N-RGO. The good electrochemical performance of N-RGO is attributed to its high surface area, high electrical conductivity, and low oxygen content.