▎ 摘　　要

A significant (almost two orders of magnitude) increase in the intensity of photo- and electroluminescence of a diode structure with an InGaAs/GaAsSb/GaAs quantum well, GaMnAs layer as a spin injector, and contact coating of a multilayer graphene film has been experimentally detected. The result has been explained by the possible formation of a hybrid system of multilayer graphene and GaAs semiconductor under the influence of He-Ne laser radiation, which leads to a change in the band diagram of the heterostructure.