▎ 摘　　要

The controlled modification of graphene properties is essential for its proposed electronic applications. Here, we describe a possibility of tuning electrical properties of graphene via electron-beam (e-beam) irradiation. We show that by controlling the irradiation dose one can change the carrier mobility and increase the resistance at the minimum conduction point in the single layer graphene. The bilayer graphene is less susceptible to the e-beam irradiation. The modification of graphene properties via irradiation can be monitored and quantified by the changes in the disorder D peak in Raman spectrum of graphene. The obtained results may lead to a new method of defect engineering of graphene physical properties. They are also important implications for fabrication of graphene nanodevices, which involve scanning electron microscopy and e-beam lithography.