• 文献标题:   Overlook of current chemical vapor deposition-grown large single-crystal graphene domains
  • 文献类型:   Article
  • 作  者:   PARK KT, KIM T, PARK CR
  • 作者关键词:   chemical vapor deposition, graphene, singlecrystal, seeded growth
  • 出版物名称:   CARBON LETTERS
  • ISSN:   1976-4251 EI 2233-4998
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   2
  • DOI:   10.5714/CL.2014.15.3.151
  • 出版年:   2014

▎ 摘  要

Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.