• 文献标题:   Epitaxial Growth of pi-Stacked Perfluoropentacene on Graphene-Coated Quartz
  • 文献类型:   Article
  • 作  者:   SALZMANN I, MOSER A, OEHZELT M, BREUER T, FENG XL, JUANG ZY, NABOK D, DELLA VALLE RG, DUHM S, HEIMEL G, BRILLANTE A, VENUTI E, BILOTTI I, CHRISTODOULOU C, FRISCH J, PUSCHNIG P, DRAXL C, WITTE G, MULLEN K, KOCH N
  • 作者关键词:   graphene, organic electronic, structure solution, pentacene, perfluoropentacene, band dispersion, grazingincidence xray diffraction
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Humboldt Univ
  • 被引频次:   73
  • DOI:   10.1021/nn3042607
  • 出版年:   2012

▎ 摘  要

Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and "standing" films, we report a pi-stacked arrangement of coplanar molecules in "flat-lying" films, which exhibit an exceedingly low pi-stacking distance of only 3.07 angstrom, giving rise to significant electronic band dispersion along the pi-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.