• 文献标题:   Electron properties of fluorinated single-layer graphene transistors
  • 文献类型:   Article
  • 作  者:   WITHERS F, DUBOIS M, SAVCHENKO AK
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Univ Exeter
  • 被引频次:   237
  • DOI:   10.1103/PhysRevB.82.073403
  • 出版年:   2010

▎ 摘  要

We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has a very large and strongly temperature-dependent resistance in the electroneutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localized electron states.