• 文献标题:   Chemical modification of vertically aligned graphene standing on SiC microspheres for selective oxidation
  • 文献类型:   Article
  • 作  者:   MA J, FEI YW, HU JQ, WU N, SUN SA, XIE F, LI GY, LI XD, WANG YL
  • 作者关键词:  
  • 出版物名称:   NEW JOURNAL OF CHEMISTRY
  • ISSN:   1144-0546 EI 1369-9261
  • 通讯作者地址:   Air Force Logist Coll
  • 被引频次:   0
  • DOI:   10.1039/c8nj05103h
  • 出版年:   2019

▎ 摘  要

Vertically aligned multi-layer graphene standing on SiC microspheres could be chemically modified to prepare nitrogen doped graphene standing on SiC microspheres (NG on SiCm). The unique structure consisted of a nitrogen doped graphene layer (the lateral dimension is approximate to 200 nm) and a solid SiC core (the diameter is in the range from 0.2 m to 0.8 m). Based on XPS analysis, the nitrogen element is controllably doped in the nanostructure of the graphene layer of NG on SiCm. The NG on SiCm is found to be an effective recyclable carbocatalyst for selective oxidation reactions. Owing to the unique nanostructure of the nitrogen doped graphene grown on the inert SiC core, the nanomaterial is not only tough enough to hardly change in chemical modification reactions, but also expected to serve as a predispersed recyclable high performance carbocatalyst.