▎ 摘　　要

Graphene quantum dots (GQDs) were synthesized via the Hummers? method and the hydrothermal cutting process. The lateral size of GQDs was 50 nm, and the thickness was 6 nm. The cubic phase ZnSe nanoparticles were obtained by the hydrothermal method, and the diffraction peaks could be ascribed to the (111), (220), (311), (400), (331) and (422) crystal planes of ZnSe. By controlling the addition amount of GQDs with 0.04%, 0.06%, 0.08%, and 0.1%, ZnSe-GQDs composites were prepared by a simple one-step hydrothermal method. When testing composite materials, we could clearly obtain two lattice stripes belonging to GQDs and ZnSe in HRTEM, respectively. ZnSe-GQDs composites could also be found the characteristic peaks representing GQDs and ZnSe at 284 nm and 446 nm on the UV?Vis absorption spectra, respectively. The effect of different GQDs contents on the photoelectric property of ZnSe-GQDs film was investigated. The optimal photocurrent density of ZnSe0.08 wt% GQDs was three times larger than that of pure ZnSe. The semicircle radius of electrochemical impedance spectrum was reduced with the addition of GQDs gradually, which proved that the appropriate amount of GQDs could reduce the charge transfer resistance of ZnSe in this composite.