▎ 摘　　要

This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G-and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials. (C) 2017 The Japan Society of Applied Physics