• 文献标题:   Graphene-Based Fluorescence-Quenching-Related Fermi Level Elevation and Electron-Concentration Surge
  • 文献类型:   Article
  • 作  者:   LIN WY, TIAN B, ZHUANG PP, YIN J, ZHANG CK, LI QY, SHIH TM, CAI WW
  • 作者关键词:   graphene, fluorescence quenching, pipi stacking, electrons transfer, raman mapping, diracpoint shift
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Xiamen Univ
  • 被引频次:   20
  • DOI:   10.1021/acs.nanolett.6b02430
  • 出版年:   2016

▎ 摘  要

Intermolecular p-orbital overlaps in unsaturated pi-conjugated systems, such as graphene and fluorescent molecules with aromatic structure, serve as the electron-exchanged path. Using Raman-mapping measurements, we observe that the fluorescence intensity of fluorescein isothiocyanate (FITC) is quenched by graphene, whereas it persists in graphene-absent substrates (SiO2). After identifying a mechanism related to photon-induced electron transfer (PET) that contributes to this fluorescence quenching phenomenon, we validate this mechanism by Conducting analyses on Dirac point shifts of FITC-coated graphene. From these shifts, Fermi level elevation and the electron-concentration surge in graphene upon visible-light impingements are acquired. Finally, according to this mechanism, graphene-based biosensors are fabricated to show the sensing capability of measuring fluorescently labeled-biomolecule concentrations.