▎ 摘　　要

Graphene has been grown on Cu at elevated temperatures with different carbon sources (gaseous hydrocarbons and solids such as polymers); however the detailed chemistry occurring at the Cu surface is not yet known. Here, we explored the possibility of obtaining graphene using amorphous-carbon thin films, without and with hydrogen gas added. Graphene is formed only In the presence of H-2(g), which strongly suggests that gaseous hydrocarbons and/or their Intermediates are what yield graphene on Cu through the reaction of H-2(g) and the amorphous carbon. The large area, uniform monolayer graphene obtained had electron and hole mobilities of 2520 and 2050 cm(2) V-1 s(-1), respectively.