• 文献标题:   Tuning Anti-Klein to Klein Tunneling in Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   DU RJ, LIU MH, MOHRMANN J, WU F, KRUPKE R, VON LOHNEYSEN H, RICHTER K, DANNEAU R
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   KIT
  • 被引频次:   5
  • DOI:   10.1103/PhysRevLett.121.127706
  • 出版年:   2018

▎ 摘  要

We show that in gapped bilayer graphene, quasiparticle tunneling and the corresponding Berry phase can be controlled such that they exhibit features of single-layer graphene such as Klein tunneling. The Berry phase is detected by a high-quality Fabry-Perot interferometer based on bilayer graphene. By raising the Fermi energy of the charge carriers, we find that the Berry phase can be continuously tuned from 2 pi down to 0.68 pi in gapped bilayer graphene, in contrast to the constant Berry phase of 2 pi in pristine bilayer graphene. Particularly, we observe a Berry phase of pi, the standard value for single-layer graphene. As the Berry phase decreases, the corresponding transmission probability of charge carriers at normal incidence clearly demonstrates a transition from anti-Klein tunneling to nearly perfect Klein tunneling.