• 文献标题:   Unified Mechanism for Graphene FET's Electrothermal Breakdown and Its Implications on Safe Operating Limits
  • 文献类型:   Article
  • 作  者:   MISHRA A, MEERSHA A, KRANTHI NK, KUMAR J, BELLAMKONDA NSV, VARIAR HB, SHRIVASTAVA M
  • 作者关键词:   electrical overstress eos /electrostatic discharge esd, electrothermal transport, graphene, safe operating area soa, timedependent failure
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1109/TED.2021.3068081
  • 出版年:   2021

▎ 摘  要

Unique electrothermal properties of graphene and the chemical nature of its degradation present a compelling set of conditions for the exploration of its breakdown at different time scales. In this work, we give a phenomenological description of graphene's electrical breakdown ranging from a nonequilibrium (transient) electrothermal state to far-equilibrium state while spanning a time scale from few nanoseconds to few minutes. The intricate roles of Pauli-blocked states, intraband heating, and mechanism of degradation in defining a safe operating area (SOA) have been explored. The time and field evolution of defects, resulting in defect-by-defect breakdown, have been studied using Raman spectroscopy. The unified mechanism of breakdown discussed here provides a basic understanding of reliability of graphene-based devices under high-current and/or high-field conditions as well as degradation due to its prolonged operation.