• 文献标题:   Possibility of Determining the Graphene Doping Level Using Raman Spectra
  • 文献类型:   Article
  • 作  者:   KOVALCHUK NG, NIGERISH KA, MIKHALIK MM, KARGIN NI, KOMISSAROV IV, PRISCHEPA SL
  • 作者关键词:   graphene doping, raman spectrum, chemical vapor deposition
  • 出版物名称:   JOURNAL OF APPLIED SPECTROSCOPY
  • ISSN:   0021-9037 EI 1573-8647
  • 通讯作者地址:   Belarusian State Univ Informat Radioelect
  • 被引频次:   1
  • DOI:   10.1007/s10812-018-0576-x
  • 出版年:   2018

▎ 摘  要

Raman spectroscopy was used to study the structure of graphene synthesized from methane by chemical vapor deposition at atmospheric pressure and transferred to a SiO2/Si substrate using various transfer and polymer-removal methods. It was found that the dependences of the 2D peak positions on the G peak positions of the studied samples were well-behaved linear functions with slopes of similar to 2.2 that suggested the existence of biaxial stress in the graphene. It was discovered that the doping in the samples changed.