文献标题: Field Effect in a Graphene Oxide Transistor for Proton and Electron-Hole Conductivities
文献类型: Article
作 者: SMIRNOV VA, MOKRUSHIN AD, VASIL EV VP, DENISOV NN, DENISOVA KN
作者关键词:
出版物名称: TECHNICAL PHYSICS LETTERS
ISSN: 1063-7850 EI 1090-6533
通讯作者地址: Russian Acad Sci
被引频次: 3
DOI: 10.1134/S1063785016070129
出版年: 2016
▎ 摘 要
Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.
