• 文献标题:   Multilayer graphene, Moire patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
  • 文献类型:   Article
  • 作  者:   XU P, QI D, SCHOELZ JK, THOMPSON J, THIBADO PM, WHEELER VD, NYAKITI LO, MYERSWARD RL, EDDY CR, GASKILL DK, NEEKAMAL M, PEETERS PM
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Univ Arkansas
  • 被引频次:   14
  • DOI:   10.1016/j.carbon.2014.08.028
  • 出版年:   2014

▎ 摘  要

Epitaxial graphene is grown on a non-polar n(+) 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moire patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moire pattern wavelength, L as L-1 + alpha L-2. (C) 2014 Elsevier Ltd. All rights reserved.