▎ 摘　　要

We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20 000 cm(2)/Vs) and ballistic electric transport on a scale larger than 200 nm. We report a particularly large on/off ratio of the current in ABC-stacked trilayers, up to 250 for an average electric displacement of -0.08 V/nm, compatible with an electric field induced energy gap. The high quality of these devices is also demonstrated by the appearance of quantum Hall plateaus at magnetic fields as low as 500 mT. (C) 2012 American Institute of Physics. [doi:10.1063/1.3675337]