▎ 摘　　要

Herein, we report the results of directly synthesizing wafer-scale graphene on silicon dioxide surface using the photoresist based and Cu and Cu/Ni thin-film coating-assisted chemical vapor deposition method. A systematical investigation of the effects of growth condition, such as temperature, time, and metal catalyst layer of Cu and Cu/Ni, on the growth of graphene have been conducted. Multi-layer graphene films are prone to be grown using the Cu/Ni capping layer, while monolayer graphene films are produced using the Cu capping layer. The results demonstrate that such simple method using solid phase photoresist as carbon feedstock can provide a practical route to realize large-scale and mass production of monolayer graphene on dielectric substrate no need of conventional transfer procedure. It sheds a light on future graphene electronic industry.