• 文献标题:   Area-selective Electron-beam induced deposition of Amorphous-BNx on graphene
  • 文献类型:   Article
  • 作  者:   BOIX V, STRUZZI C, GALLO T, JOHANSSON N, D ACUNTO G, YONG ZH, ZAKHAROV A, LI ZS, SCHNADT J, MIKKELSEN A, KNUDSEN J
  • 作者关键词:   graphene, electronbeam induced deposition, amorphous boron nitride, xps, leem, stm
  • 出版物名称:   APPLIED SURFACE SCIENCE
  • ISSN:   0169-4332 EI 1873-5584
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.apsusc.2021.149806 EA APR 2021
  • 出版年:   2021

▎ 摘  要

Thin, stable and inert dielectric spacers are essential for manufacturing electronic devices based on 2D materials. However, direct synthesis on top of 2D materials is difficult due to their inert nature. In this work, we studied how an electron beam induces fragmentation of borazine and enables spatially confined synthesis of amorphousBNx on graphene at room temperature. Using a combination of X-ray Photoelectron Spectroscopy, Low Energy Electron Microscopy, and Scanning Tunneling Microscopy we studied the morphology of the heterostructure, its chemical composition, and finally its temperature evolution. We find that electron-beam induced deposition starts by the binding of heavily fragmentized borazine, including atomic boron, followed by the growth of a multilayer with a 1:0.7 B:N ratio. The final structure exhibits a thermal stability up to 1400 K and similar to 50 nm spatial control provided by the electron beam. Our studies provide surface science insight into the use of electron beams for synthesis and lateral control of stable and inert layers in 2D heterostructures.