• 文献标题:   High-frequency rectification in graphene lateral p-n junctions
  • 文献类型:   Article
  • 作  者:   VASILYEV YB, VASILEVA GY, NOVIKOV S, TARASENKO SA, DANILOV SN, GANICHEV SD
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Ioffe Inst
  • 被引频次:   2
  • DOI:   10.1063/1.5013100
  • 出版年:   2018

▎ 摘  要

We observe a dc electric current in response to terahertz radiation in lateral inter-digitated double-comb graphene p-n junctions. The junctions were fabricated by selective ultraviolet irradiation inducing p-type doping in intrinsic n-type epitaxial monolayer graphene. The photocurrent exhibits a strong polarization dependence and is explained by electric rectification in p-n junctions. Published by AIP Publishing.