• 文献标题:   Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
  • 文献类型:   Article
  • 作  者:   TOMER D, RAJPUT S, HUDY LJ, LI CH, LI L
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Wisconsin
  • 被引频次:   15
  • DOI:   10.1063/1.4919727
  • 出版年:   2015

▎ 摘  要

Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across these junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs, and Gr/Si Schottky junctions under reverse bias are investigated by temperature-dependent current-voltage measurements. A reduction in barrier height with increasing bias is observed for all junctions, suggesting electric-field enhanced thermionic emission. Further analysis of the field dependence of the reverse current reveals that while carrier transport in Gr/SiC Schottky junctions follows the Poole-Frenkel mechanism, it deviates from both the Poole-Frankel and Schottky mechanisms in Gr/Si and Gr/GaAs junctions, particularly for low temperatures and fields. (C) 2015 AIP Publishing LLC.