▎ 摘　　要

In this work, the RF performance of proposed p-type NiO pocket based beta-Ga2O3/graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (g(m)), output conductance (g(d)), intrinsic capacitances (gate to drain capacitance C-gd and gate to source capacitance C-gs) and cut-off frequency (f(T)). The large signal CW RF performance is also investigated which includes output power (P-OUT), power-added efficiency (PAE) and power gain (G(p)) as a key FOMs. The key idea behind this work is to demonstrate a device with improved RF performance and low leakages. The RF characteristics of the proposed device have been studied to show its utility in the wireless applications. The introduction of ultra-thin graphene layer beneath the channel region results in 0.85 times lower C-gs, 1.04 times improvement in f(T) and 1.5 dB superior G(P) in comparison to the p-type NiO pocket based beta-Ga2O3 (NiO-GO) MOSFET. The proposed structure shows superior RF performance with low leakages. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.