▎ 摘　　要

Graphene photodetectors have attracted much attention recently for their unique electronic and optical properties. However, the performance of these devices is limited by the inherently weak light absorption and short lifetime of photoinduced carriers. Herein, porous interface is introduced through the chemical etching of deposited titanium (Ti) on the top of the graphene. Then the interfacial trap level is formed, which could trap photo-generated carriers to prolong their lifetime. Thanks to this mechanism, the phenomenon of fluorescence quenching is more obvious and the responsivity of this proposed photodetector is up to 1.76 A W-1 at a wavelength of 1064 nm. These results provide a facile and effective approach for the fabrication of high-performance graphene photodetectors.