• 文献标题:   Raman spectroscopy of bottom-up synthesized graphene quantum dots: size and structure dependence
  • 文献类型:   Article
  • 作  者:   DERVISHI E, JI ZQ, HTOON H, SYKORA M, DOORN SK
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Ctr Integrated Nanotechnol
  • 被引频次:   24
  • DOI:   10.1039/c9nr05345j
  • 出版年:   2019

▎ 摘  要

Graphene quantum dots (GQDs) have attracted significant interest as synthetically tunable optoelectronic and photonic materials that can also serve as model systems for understanding size-dependent behaviors of related graphene structures such as nanoribbons. We present a Raman spectroscopy study of bottom-up synthesized GQDs with lateral dimensions between 0.97 to 1.62 nm, well-defined (armchair) edge type, and fully benzenoid structures. For a better understanding of observed size-dependent trends, the study is extended to larger graphene structures including nano-graphene platelets (>25 nm) and large-area graphene. Raman spectra of GQDs reveal the presence of D and G bands, as well as higher order modes (2D, D + G, and 2G). The D and G band frequencies and intensity were found to increase as GQD size increases, while higher order modes (2D, D + G, and 2G) also increased in intensity and became more well-defined. The integrated intensity ratios of D and G bands (I-D/I-G) increase as the size of the GQDs approaches 2 nm and rapidly decrease for larger graphene structures. We present a quantitative comparison of I-D/I-G ratios for the GQDs and for defects introduced into large area graphenes through ion bombardment, for which inter-defect distances are comparable to the sizes of GQDs studied here. Close agreement suggests the I-D/I-G ratio as a size diagnostic for other nanographenes. Finally, we show that Raman spectroscopy is also a good diagnostic tool for monitoring the formation of bottom-up synthesized GQDs.