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文献标题: Structural and resistive switching behaviour in lanthanum strontium manganite - Reduced graphene oxide nanocomposite system
文献类型: Article
作　　者: KUMARI K, KUMAR A, KOTNEES DK, BALAKRISHNAN J, THAKUR AD, RAY SJ
作者关键词: resistive switching, reduced graphene oxide, manganite, nanocomposite, nonvolatile memory
出版物名称: JOURNAL OF ALLOYS COMPOUNDS
ISSN: 0925-8388 EI 1873-4669
通讯作者地址: Indian Inst Technol Patna
被引频次: 5
DOI: 10.1016/j.jallcom.2019.152213
出版年: 2020

▎ 摘　　要

Nanocomposite made of La0.7Sr0.3MnO3 (LSMO) and reduced graphene oxide (rGO) is a promising candidate for non-volatile memory application in oxide electronics. Here, we report bipolar resistive switching (RS) behaviour in (1-x)LSMO center dot(x)rGO nanocomposite system, for 0.001