▎ 摘　　要

Boron doped graphene oxide (B-GO) is a highly effective adsorbent for ammonia due to the high density of strong Lewis acid sites arising from the boron. GO was doped by various amounts of boron described as xB-GO (x= 1.0, 3.0, and 5.0). B-GO was successfully synthesized and the boron doping was confirmed by X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The adsorption characteristics of BGO were investigated by adsorption isotherm and thermal desorption spectroscopy. The adsorption isotherm shows an increase of ammonia adsorption with increasing concentration of boron such as 12.03 molkg(-1), 16.30 molkg(-1) and 15.58 molkg(-1). It is confirmed that the amount of ammonia adsorbed on the boron sites is limited to a certain amount due to the reduction of Lewis acid sites by B O bonds. Boron doped into GO significantly enhances the adsorption capacity for ammonia.