• 文献标题:   Interfacial adhesion between graphene and silicon dioxide by density functional theory with van der Waals corrections
  • 文献类型:   Article
  • 作  者:   GAO W, XIAO PH, HENKELMAN G, LIECHTI KM, HUANG R
  • 作者关键词:   graphene, adhesion, silicon dioxide, dft, van der waal
  • 出版物名称:   JOURNAL OF PHYSICS DAPPLIED PHYSICS
  • ISSN:   0022-3727 EI 1361-6463
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   52
  • DOI:   10.1088/0022-3727/47/25/255301
  • 出版年:   2014

▎ 摘  要

Interfacial adhesion between graphene and a SiO2 substrate is studied by density functional theory (DFT) with dispersion corrections. The results demonstrate the van der Waals (vdW) interaction as the predominant mechanism at the graphene/SiO2 interface. It is found that the interaction strength is strongly influenced by changes of the SiO2 surface structures due to surface reactions with water. The adhesion energy is reduced when the reconstructed SiO2 surface is hydroxylated, and further reduced when covered by a monolayer of adsorbed water molecules. Moreover, it is noted that vdW forces are required to accurately model the graphene/SiO2 interface with DFT and that the adhesion energy is underestimated by empirical force fields commonly used in atomistic simulations.