▎ 摘　　要

Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-stacking layer were fabricated. By using the traditional transfer method, the chemical vapor deposition-synthesized SLG serving as charging layers were combined with poly(methyl methacrylate) (PMMA) layers and polystyrene (PS) layers to form charge traps with various depth. Based on the PS/SLG/PMMA/SLG/PMMA multi-stacking layer, the devices exhibited efficient tristable memory performances. The ratios as large as 10(4) between different resistive states were maintained for a retention time of more than 10(4) s. The operation mechanisms of stepping-charging in the multi-stacking layer for the tristable resistive switching were proposed on the basis of the current-voltage analysis. (C) 2014 AIP Publishing LLC.