• 文献标题:   Electronic Properties of Graphene-PtSe2 Contacts
  • 文献类型:   Article
  • 作  者:   SATTAR S, SCHWINGENSCHLOGL U
  • 作者关键词:   graphene, platinum diselenide, contact, band bending, heterostructure
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   King Abdullah Univ Sci Technol
  • 被引频次:   13
  • DOI:   10.1021/acsami.7b00012
  • 出版年:   2017

▎ 摘  要

In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe2 using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe2 and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe2 and a p-type Schottky contact with bilayer PtSe2 is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.