• 文献标题:   Large Physisorption Strain in Chemical Vapor Deposition of Graphene on Copper Substrates
  • 文献类型:   Article
  • 作  者:   HE R, ZHAO LY, PETRONE N, KIM KS, ROTH M, HONE J, KIM P, PASUPATHY A, PINCZUK A
  • 作者关键词:   graphene, cvd, strain, copper
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ No Iowa
  • 被引频次:   86
  • DOI:   10.1021/nl300397v
  • 出版年:   2012

▎ 摘  要

Graphene single layers grown by chemical vapor deposition on single crystal Cu substrates are subject to nonuniform physisorption strains that depend on the orientation of the Cu surface. The strains are revealed in Raman spectra and quantitatively interpreted by molecular dynamics (MD) simulations. An average compressive strain on the order of 0.5% is determined in graphene on Cu(111). In graphene on Cu (100), MD simulations interpret the observed highly nonuniform strains.