• 文献标题:   High-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide
  • 文献类型:   Article
  • 作  者:   CAI CH, QIN M
  • 作者关键词:  
  • 出版物名称:   ELECTRONICS LETTERS
  • ISSN:   0013-5194 EI 1350-911X
  • 通讯作者地址:   Southeast Univ
  • 被引频次:   3
  • DOI:   10.1049/el.2012.4141
  • 出版年:   2013

▎ 摘  要

A high-performance bulk silicon interdigital capacitive temperature sensor based on graphene oxide (GO) is presented. Compared with typical CMOS integrated temperature sensors, the sensitivity of this bulk silicon interdigital capacitive temperature sensor was improved significantly by using GO as sensing material, and this temperature sensor can operate in the range of -70 to 40 degrees C.